首页 >TFDS6501E>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

TFDS6501E

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

VishayVishay Siliconix

威世科技威世科技半导体

TFDS6501E-TR4

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

VishayVishay Siliconix

威世科技威世科技半导体

TFDT6501E

FastInfraredTransceiverModuleFamily(FIR,4Mbit/s)for2.6Vto5.5VOperation

VishayVishay Siliconix

威世科技威世科技半导体

THN6501

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501E

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501E

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501F

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighGain MAG=11.5dBatf=1GHz,VCE=10V,IC=20mA oHighTransitionFrequency fT=7GHzatf=1GHz,VCE=10V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501S

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501S

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501U

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

详细参数

  • 型号:

    TFDS6501E

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Fast Infrared Transceiver Module Family(FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

供应商型号品牌批号封装库存备注价格
VISHAY
93+
SMD
7332
原装正品-长期供应09
询价
VISHAY
2016+
SMD
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
VISHAY
13+
10868
原装分销
询价
24+
N/A
6868
原装现货,可开13%税票
询价
VISHAY
2020+
2300
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY原装
25+23+
SMD
28219
绝对原装正品全新进口深圳现货
询价
SMD
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAV
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
24+
SMD
880000
明嘉莱只做原装正品现货
询价
VISHAY/威世
25+
SMD
64581
百分百原装现货 实单必成 欢迎询价
询价
更多TFDS6501E供应商 更新时间2025-6-8 10:18:00