SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

文件：230.71 Kbytes 页数：15 Pages

AUK

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA o High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

文件：231.19 Kbytes 页数：13 Pages

TACHYONICS

SiGe NPN Transistor

Kodenshi-AUK

DUAL-MODE DIGITAL CAMERA CO-PROCESSOR

DESCRIPTION STMicroelectronics Imaging Division has produced the camera co-processor STV0681 which, used with CIF/VGA sensors as part of a low cost dual-mode camera chipset, allows a new line of low cost cameras or toy products to be brought to the market. STV0681 is a mask ROM version of STV0680

文件：351.42 Kbytes 页数：44 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

文件：33.49 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 2SD0601A(2SD601A) × 2 elements

文件：33.25 Kbytes 页数：2 Pages

PANASONIC

松下