Surface Mount IRED/Inner Lens Type

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STANLEY

STANLEY ELECTRIC CO.,LTD.

Low Noise and Medium Power GaAs FETs

[TRANSCOM] DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applicatio

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Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including

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TRANSCOM

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Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All d

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TRANSCOM

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