high power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for

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350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

[GHz-Technology] GENERAL DESCRIPTION The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input

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350 W, 50 V, 960-1215 MHz common base transistor

GHz Technology

Package：55ST；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V 1.215GHZ 55ST

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