250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

GENERAL DESCRIPTION The TAN250A is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch fo

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MICROSEMI

美高森美

RF POWER TRANSISTOR

DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

文件：23.1 Kbytes 页数：1 Pages

ASI

high power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input output prematch for bro

文件：204.19 Kbytes 页数：3 Pages

GHZTECH

250 W, 50 V, high power common base bipolar transistor

Acrian

Package：55AW；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 60V 1.215GHZ 55AW

MICROSEMI

美高森美