丝印：tAN；Package：SOT23；CAN bus ESD protection diode

Features * Ultra low leakage: nA level * Operating voltage: 24V * Low clamping voltage * Complies with following standards: ~ IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV/ Contact discharge: +30kV — IEC61000-4-4 (EFT) 40A (5/50ns) —IEC61000-4-5 (Lightning) 3A (8/20ps) * RoHS Co

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TECHPUBLIC

台舟电子

丝印：tAN；Package：SOT-23；2-Line bi-directional TVS Diode

Features 4 90W peak pulse power(8/20s) 4 Ultra low leakage: nA level 4 Operating voltage: 24V 4 Low clamping voltage 4 Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +25kV Contact discharge: +20kV — IEC61000-4-4 (EFT) 40A (5/50ns) —IEC61000-4-5 (Lig

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TECHPUBLIC

台舟电子

High-Quality Function Generator System with the XR-2206

INTRODUCTION Waveform or function generators capable of producing AM/FM modulated sine wave outputs find a wide range of applications in electrical measurement and laboratory instrumentation. This application note describes the design, construction and performance of such a complete function ge

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EXAR

艾科嘉

XR-T5683 Operation at 10.1 Mbps

INTRODUCTION The purpose of this application note is to present an example circuit, illustrating how to operate the XR-T5683 device at 10.1 Mbps. This note shows the results of measurements made on the XR-T5683 at a 10.1 Mbps data rate. Hardware used for this evaluation was a slightly modified bo

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EXAR

艾科嘉

Power Conditioning Requirements

XRT7300 DS3/E3/STS-1 LIU Power Conditioning Requirements

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EXAR

艾科嘉

150 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

GENERAL DESCRIPTION The TAN150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for b

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GHZTECH

150 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

GENERAL DESCRIPTION The TAN150 is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for

文件：77.91 Kbytes 页数：3 Pages

Microsemi

美高森美

How to Generate a 1.544MHz (or 2.048MHz) Clock Signal from an 8kHz Reference Clock

How to Generate a 1.544MHz (or 2.048MHz) Clock Signal from an 8kHz Reference Clock

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EXAR

艾科嘉

RF POWER TRANSISTOR

DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

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ASI

RF POWER TRANSISTOR

DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

文件：23.1 Kbytes 页数：1 Pages

ASI