BCP69-25

PNPSiliconAFTransistor

BCP69-25

20V,2APNPmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP69-25-Q

20V,2APNPmediumpowertransistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinau

BCX69-25

PNPSiliconAFTransistors

BCX69-25

PNPSiliconAFTransistors

Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

BCX69-25

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN)

BCX69-25

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX68 PARTMARKINGDETAIL–BCX69–CJ BCX69-16–CG BCX69-25–CH

BCX69-25

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BCX69-25

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

DCX69-25TA

PNPSURFACEMOUNTTRANSISTOR