BCP69-25-Q

Package：SOT223；20 V, 2 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinau

BCP69-25-Q

PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.;

PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n

BCX69-25

PNPSiliconAFTransistors

Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

BCX69-25

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BCX69-25

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN)

BCX69-25

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX68 PARTMARKINGDETAIL–BCX69–CJ BCX69-16–CG BCX69-25–CH

BCX69-25

PNPSiliconAFTransistors

BCX69-25

PNPSiliconAFTransistors

•ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX68(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

DCX69-25TA

PNPSURFACEMOUNTTRANSISTOR

T69-25

T69-25GraphiteSheets

Features Highlyorientedpyrolyticgraphitesheetwithhighthermalconductivity Itisflexibleandhasfeaturesofultra-thinandhighEMIshieldingeffect Excellentthermalconductivity:1600W/mK(4xashighascopper,7xashighas aluminium) Lightweight:Specificgravity:2.3 Flexible