T69-25

T69-25 Graphite Sheets

Features Highlyorientedpyrolyticgraphitesheetwithhighthermalconductivity Itisflexibleandhasfeaturesofultra-thinandhighEMIshieldingeffect Excellentthermalconductivity:1600W/mK(4xashighascopper,7xashighas aluminium) Lightweight:Specificgravity:2.3 Flexible

BC69-25PA

20V,2APNPmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BC69-25PAS

20V,2APNPmediumpowertransistors

Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

BC69-25PAS

20V,2APNPmediumpowertransistors

BCP69-25

PNPSiliconAFTransistor

BCP69-25

PNPPlastic-EncapsulateTransistors

BCP69-25

PNPmediumpowertransistor

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages.

BCP69-25

PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain)

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

BCP69-25

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *ForAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) COMPLEMENTARYTYPE–BCP68 PARTMARKINGDETAIL–BCP69 BCP69-25

BCP69-25

PNPSiliconAFTransistor

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)