PJT7600_R1_00001

Marking：T60；Package：SOT-363；20V Complementary Enhancement Mode MOSFET – ESD Protected

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ESDProtected2KVHBM LeadfreeincompliancewithEURoHS2011/65/EUdirective GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

PJT7600_R2_00001

Marking：T60；Package：SOT-363；20V Complementary Enhancement Mode MOSFET – ESD Protected

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ESDProtected2KVHBM LeadfreeincompliancewithEURoHS2011/65/EUdirective GreenmoldingcompoundasperIEC61249Std. (HalogenFree)

DMT6006SPS-13

Marking：T6006SS；Package：PowerDI5060-8；60V N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhigh-efficiencypowermanagementapplications. SynchronousRectifier DC-DCConverters PowerManagement Features 100UnclampedInductiveSwit

STTH602CSF

Marking：T602C；Package：TO-277A；200 V, dual 3 A ultrafast rectifier

Description TheSTTH602CSFhasbeendevelopedforapplicationsrequiringanoptimizedVFandreverserecoverycharacteristics. Thesecharacteristicsmakeitidealforuseinsecondaryrectificationfunctions,suchasDC/DCconvertersorlightingapplications. Features •175°Cmaximumoperatio

STTH602CSFY

Marking：T602CY；Package：TO-277A；Automotive 200 V, dual 3 A ultrafast rectifier