丝印：T61；Package：SOT-363；20V Complementary Enhancement Mode MOSFET – ESD Protected

Features  Low Voltage Drive (1.2V)  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：575.44 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：T61；Package：SOT-363；20V Complementary Enhancement Mode MOSFET – ESD Protected

Features  Low Voltage Drive (1.2V)  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：575.44 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：T61；SurgeSwitchTM 1-Line, 22V EOS Protection

Description Transient Diverting Suppressors(TDS) are designed to provide high energy EOS protection with superior clamping and temperature characteristics when compared to standard TVS devices. The device uses a surge rated FET as the main protection element. During an EOS event, transient v

文件：1.1264 Mbytes 页数：9 Pages

SEMTECH

先之科

丝印：T61；Package：DFN；1-Line, 30V EOS Protection

Features High ESD withstand Voltage: ±30kV (Contact) and ±30kV (Air) per IEC 61000-4-2 High peak pulse current capability: 40A (tp = 8/20μs), 2kV (tp = 1.2/50μs, RS = 42Ω ) per IEC 61000-4-5 High EFT Withstand Voltage: ±4kV (100kHz and 5kHz, 5/50ns) IEC 61000-4-4 Protects one I/O or pow

文件：978.33 Kbytes 页数：8 Pages

SEMTECH

先之科

丝印：T61；Package：DFN；1-Line, 30V EOS Protection

Features High ESD withstand Voltage: ±30kV (Contact) and ±30kV (Air) per IEC 61000-4-2 High peak pulse current capability: 40A (tp = 8/20μs), 2kV (tp = 1.2/50μs, RS = 42Ω ) per IEC 61000-4-5 High EFT Withstand Voltage: ±4kV (100kHz and 5kHz, 5/50ns) IEC 61000-4-4 Protects one I/O or pow

文件：978.33 Kbytes 页数：8 Pages

SEMTECH

先之科

丝印：T616MLS；Package：SO-8；60V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance RDS(ON)) and maintain superior switching performance, which makes ideal for high-efficiency power management applications. High-Frequency Switching Synchronous Rectification DC-DC Converters Features

文件：473.76 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T610T-8FP；Package：TO-220FPAB；6 A logic level Triac

Description Available in through-hole fullpack package, the T610T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller thanks to its 10 mA gate current requirement. Provide UL certified insula

文件：356.26 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：T61DB；Package：SOT-23；TLV916x 16-V, 11-MHz, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6.8 nV/√Hz at 1 kHz, 4.2 nV/√Hz broadband • High common-mode rejection: 110 dB • Low bias current: ±10 pA • Rail-to-rail input and output • MUX-friendly/comparator inputs – Amplifier operates wit

文件：4.75281 Mbytes 页数：69 Pages

TI

德州仪器

丝印：T61DB；Package：SOT-23；TLV916x 16V, 11MHz, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • Low offset voltage: ±210μV • Low offset voltage drift: ±0.25μV/°C • Low noise: 6.8nV/√Hz at 1kHz, 4.2nV/√Hz broadband • High common-mode rejection: 110dB • Low bias current: ±10pA • Rail-to-rail input and output • MUX-friendly/comparator inputs – Amplifier operates with diffe

文件：4.5202 Mbytes 页数：68 Pages

TI

德州仪器

丝印：T6139；Package：VQFN；TPA6139A2 DirectPath™ 25-mW Headphone Amplifier With Programmable-Fixed Gain

1 Features 1• DirectPath™ – Eliminates Pops and Clicks – Eliminates Output DC-Blocking Capacitors – 3-V to 3.6-V Supply Voltage • Low Noise and THD – SNR > 105 dB at –1x Gain – Typical Vn

文件：792.85 Kbytes 页数：32 Pages

TI

德州仪器