1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：720.07 Kbytes 页数：30 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：720.07 Kbytes 页数：30 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：720.07 Kbytes 页数：30 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：720.07 Kbytes 页数：30 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：720.07 Kbytes 页数：30 Pages

TMT

凯钰科技

512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION\nThe T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on eve • 3.3V power supply\n• Clock cycle time : 6 / 7 ns\n• Dual banks operation\n• LVTTL compatible with multiplexed address\n• All inputs are sampled at the positive going edge of system clock\n• Burst Read Single-bit Write operation\n• DQM for masking\n• Auto refresh and self refresh\n• 32ms refresh pe;

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