1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is

文件：756.63 Kbytes 页数：74 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is

文件：756.63 Kbytes 页数：74 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is

文件：756.63 Kbytes 页数：74 Pages

TMT

凯钰科技

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is

文件：756.63 Kbytes 页数：74 Pages

TMT

凯钰科技