T431616C中文资料512K x 16bit x 2Banks Synchronous DRAM数据手册TM规格书

描述 Description

GRNERAL DESCRIPTION
The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications.FEATURES
• 3.3V power supply
• Clock cycle time : 6 / 7 ns
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
• Available package type :
- 50 pin TSOP(II)/lead-free
• Operating temperature : - 0 ~ +70 °C

特性 Features

• 3.3V power supply
• Clock cycle time : 6 / 7 ns
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
• Available package type :
- 50 pin TSOP(II)/lead-free
• Operating temperature : - 0 ~ +70 °C