丝印：T100；Package：MPT3；Power Transistor (60V, 3A)

文件：43.04 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Small switching (30V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：127.68 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Small switching (60V, 2A)

● Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel.

文件：137.67 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；4V Drive Nch MOS FET

Features 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. Applications Switching

文件：65.51 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Midium Power Transistors (-30V / -1A)

文件：529.39 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Medium Power Transistors (−30V / −2A)

文件：226.77 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Power transistor (−20V, −2A)

文件：69.67 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Midium Power Transistors (30V / 1A)

文件：486.55 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Midium Power Transistors (120V / 700mA)

文件：1.07114 Mbytes 页数：5 Pages

ROHM

罗姆