N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

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SEMIPOWER

芯派科技

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体