N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：737.75 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-Channel 650 V (D-S) MOSFET

文件：1.135 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel MOSFET

General Description\nThis power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is us ■ High ruggedness\n■ RDS(ON) (Max 12 Ω)@VGS=10V\n■ Gate Charge (Max 6nC)\n■ Improved dv/dt Capability\n■ 100% Avalanche Tested ;

Semipower

芯派科技

N-channel D-PAK/I-PAK/TO-92 MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：742.77 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-Channel 650 V (D-S) MOSFET

文件：1.08794 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.39516 Mbytes 页数：5 Pages

DOINGTER

杜因特