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UPA801

NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5006FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD

DESCRIPTION TheµPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Flat-lead

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPA801T

NPNSILICONHIGHFREQUENCY

CEL

California Eastern Labs

UPA801T

NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5006FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD

DESCRIPTION TheµPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Flat-lead

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPA801T

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

UPA801T

HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

TheµPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPA801T

NONLINEARMODEL

CEL

California Eastern Labs

UPA801TC

NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5006FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD

DESCRIPTION TheµPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Flat-lead

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPA801TF

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPGT801

surface-mountLED

SEOULSeoul Semiconductor Co., Ltd.

首尔半导体首尔半导体有限公司

UPGT801-S

IndustryStandardPLCCSMTpackage

SEOULSeoul Semiconductor Co., Ltd.

首尔半导体首尔半导体有限公司

详细参数

  • 型号:

    SWB801B

  • 制造商:

    BOWEI

  • 制造商全称:

    BOWEI

  • 功能描述:

    8-SPST Switches

供应商型号品牌批号封装库存备注价格
TI
24+
CAN3
10000
原装现货假一罚十
询价
TI
专业铁帽
CAN3
10000
原装铁帽专营,代理渠道量大可订货
询价
TI/德州仪器
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
询价
TI/德州仪器
23+
CAN3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SEOUL原装
24+
LED
9600
原装现货,优势供应,支持实单!
询价
SEOUL
23+
LED
50000
全新原装正品现货,支持订货
询价
SEOUL
24+
NA/
8000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SEOUL原装
24+
LED
60000
全新原装现货
询价
SEOUL
2022+
3500
全新原装 货期两周
询价
SEOUL
17PB
LED
2880
现货
询价
更多SWB801B供应商 更新时间2025-7-27 8:01:00