丝印：SVS5N70；Package：TO-251J-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

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丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70F；Package：TO-220F-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

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丝印：SVS5N70MU；Package：TO-251U-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70；Package：TO-251J-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70F；Package：TO-220F-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70MU；Package：TO-251U-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微