丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

超结MOS功率管

SVS5N70D/MJ/MN/F N沟道增强型高压功率MOSFET采用士兰微电子超结MOS技术平台制造，具有很低的传导损耗和开关损耗。使得功率转换器具有高效，高功率密度，提高热行为。\n\n 此外，SVS5N70D/MJ/MN/F应用广泛。如，适用于硬/软开关拓扑。\n\n • 5A,700V, RDS(on)(typ.)=0.8W@VGS=10V \n• 创新高压技术\n• 低栅极电荷\n• 较强的雪崩能力\n• 较强的dv/dt能力\n• 较高的峰值电流能力;

Silan

士兰微

Multi-Epi DPMOS

Silan

士兰微