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型号	下载订购	功能描述	制造商上传企业	LOGO
SVD4N60T	文件：1.09029 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET 文件：1.09029 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
SVF4N60CADTR	文件：411.7 Kbytes Page：12 Pages	4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：411.7 Kbytes 页数：12 Pages	SILAN 士兰微	SILAN
SVF4N60CAF	文件：411.7 Kbytes Page：12 Pages	4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：411.7 Kbytes 页数：12 Pages	SILAN 士兰微	SILAN
SVF4N60CAK	文件：411.7 Kbytes Page：12 Pages	4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：411.7 Kbytes 页数：12 Pages	SILAN 士兰微	SILAN

更多SVD4N60T供应商更新时间2026-1-26 10:38:00