丝印：SVD640T；Package：TO-220-3L；18A, 200V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailore

文件：406.39 Kbytes 页数：8 Pages

SILAN

士兰微

中低压功率MOSFET

Silan

士兰微

N-Channel MOSFET uses advanced trench technology

文件：1.8167 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel MOSFET

[SEMIPOWER] General Description This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristic

文件：582.65 Kbytes 页数：6 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

General Battery

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SUNNYWAY

三威电源