SVD5N60T数据表ic资料库存现货微碧半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SVD5N60T	文件：1.09028 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET 文件：1.09028 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
SVF5N60D	文件：1.07807 Mbytes Page：9 Pages	Power MOSFET 文件：1.07807 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
SVF5N60D	文件：489.01 Kbytes Page：10 Pages	5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages	SILAN 士兰微	SILAN
SVF5N60DTR	文件：489.01 Kbytes Page：10 Pages	5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages	SILAN 士兰微	SILAN

更多SVD5N60T供应商更新时间2025-10-6 9:01:00