Automotive-grade N-channel 650 V, 42 m typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastre

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汽车级N沟道650 V、42 mOhm典型值、60 A MDmesh DM2功率MOSFET，TO-247长引线封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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Automotive-grade N-channel 650 V, 0.042 廓 typ., 60 A Power MOSFET MDmesh??DM2 in a TO-247 package

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STMICROELECTRONICS

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SOT23-5

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SOT23-5

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上传：海芯未来半导体电子（深圳）有限公司