STW65N65DM2AG

汽车级N沟道650 V、42 mOhm典型值、60 A MDmesh DM2功率MOSFET，TO-247封装; • Designed for automotive applications and AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STW65N65DM2AG

丝印：65N65DM2；Package：TO-247；Automotive-grade N-channel 650 V, 0.042 廓 typ., 60 A Power MOSFET MDmesh??DM2 in a TO-247 package

STWA65N65DM2AG

Automotive-gradeN-channel650V,42mtyp.,60AMDmeshDM2PowerMOSFETinaTO-247longleadspackage

Features •AEC-Q101qualified •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastre