丝印：8N120K5；Package：TO-247；N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 package

Features • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

文件：278.86 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道1200 V、1.65 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-247封装

这款超高压N-沟道功率MOSFET 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。 • 业界领先的低 RDS(on) x 面积 \n• 业界出色的品质因数（FoM） \n• 极低的栅极电荷 \n• 经过100％雪崩测试 \n• 稳压保护;

ST

意法半导体

N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package

Features • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

文件：302.84 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package

Features • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

文件：278.42 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体