isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.034Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 200V - 0.028廓 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：508.26 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

200V SGT N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Managment • Load Switch

文件：705.93 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode Power MOSFET

文件：484.28 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-channel 200V - 0.028廓 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

文件：508.26 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体