isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：114.29 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET™ II POWER MOSFET

ST

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件：449.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：993.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：533.29 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体