N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET，TO-247封装

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

丝印：70N60DM6；Package：TO-247；N-channel 600 V, 36 m廓 typ., 62 A, MDmesh DM6 Power MOSFETs in TO??47 and TO??47 long leads packages

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STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V 62A TO247

STMICROELECTRONICS

意法半导体

N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET，TO247-4封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

ST

意法半导体