STW70N60DM6-4

N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET，TO247-4封装; • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STZ5.6NT146

ROHM
SMD3

SUCS32405C

COSEL
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SUCS62405C

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SUCW100515C

COSEL
na