N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET，TO247-4封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

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意法半导体

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TO-247

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公司现货

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上传：海芯未来半导体电子（深圳）有限公司

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公司现货

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上传：海芯未来半导体电子（深圳）有限公司

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TO-247-3

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