N沟道650 V、0.042 Ohm典型值、60 A MDmesh DM2功率MOSFET，TO-247封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high- efficiency converters and ideal for bridge topologies and ZVS phase-sh • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 650V 65A TO247

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.042 typ., 60 A MDmeshTM DM2 Power MOSFET in a TO-247 long leads package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series

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STMICROELECTRONICS

意法半导体

TO-247

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