汽车级N沟道650 V、0.058 Ohm典型值、48 A MDmesh DM2功率MOSFET，TO-247封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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丝印：58N65DM2；Package：TO-247；Automotive-grade N-channel 650 V, 0.058 廓 typ., 48 A MDmesh??DM2 Power MOSFET in a TO-247 package

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STMICROELECTRONICS

意法半导体

TO-247

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