汽车级N沟道650 V、0.070 Ohm典型值、38 A MDmesh DM2功率MOSFET，TO-247封装

• Designed for automotive applications and AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

丝印：50N65DM2；Package：TO-247；Automotive-grade N-channel 650 V, 0.070 廓 typ., 38 A Power MOSFET MDmesh??DM2 in a TO-247 package

文件：768.74 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmeshTM DM2 in TO-247 long leads package

Features  AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fas

文件：726.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

TO-247

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上传：深圳市轩嘉盛电子有限公司

TO-247

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上传：深圳市粤骏腾电子科技有限公司