首页 >STW42N65M5,W42N65M5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070廓,34AMDmesh??VPowerMOSFETinPowerFLAT??8x8HVpackage Description ThisdeviceisanN-channelMDmesh™VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH™horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
原厂原封 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
23+ |
NA |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
2020+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST/意法 |
22+ |
TO-247 |
88168 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST/意法 |
22+ |
TO-247 |
88168 |
询价 | |||
ST/意法 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST/意法 |
2022+ |
TO-247 |
8000 |
只做原装支持实单,有单必成。 |
询价 | ||
ST/意法 |
2022+ |
TO-247 |
79999 |
询价 | |||
ST/意法 |
2023+ |
TO-247 |
50000 |
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询价 |
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