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STW28NM60ND数据手册ST中文资料规格书
STW28NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
Intrinsic fast-recovery body diode
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STW28NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Rail/Tube
- 功能描述：
MOSFET N-CH 600V 24A TO-247
- 功能描述：
N-chanel 600 V 0.120 Ohm typ 24 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
TO-247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST |
21+ |
TO247 |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST/意法半导体 |
22+ |
TO-247-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
16900 |
原装，正品 |
询价 | ||
ST/意法 |
23+ |
TO247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
MICROCHIP/微芯 |
25+ |
TO-247-3 |
32360 |
MICROCHIP/微芯全新特价STW28NM60ND即刻询购立享优惠#长期有货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-247-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST |
17+ |
TO247 |
6200 |
100%原装正品现货 |
询价 |
