N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.8 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 package.

文件：171.49 Kbytes 页数：7 Pages

SAMHOP

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：521.62 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Soft starter Module

Features • Pressure contact technology for high reliability • Advanced Medium Power Technology (AMPT) • Integrated optimized heatsink

文件：905.84 Kbytes 页数：9 Pages

INFINEON

英飞凌

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：133.46 Kbytes 页数：8 Pages

SAMHOP

三合微科

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

DESCRIPTION Using the latest low voltage Epitaxial Planar technology based on interdigitated layout, STMicroelectronics has introduced the new “High Gain” Power bipolar transistor family, with outstanding performances. Its very low saturation voltage combined with the “high gain” characteristics

文件：87.86 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

Description The device is manufactured in low voltage PNP Planar Technology with Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (h

文件：142.49 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：STTH1003SY；Package：DPAK；Automotive high efficiency rectifier

Description The STTH1003S-Y is an ultrafast recovery power rectifier dedicated to energy recovery in automotive applications. The STTH1003S-Y is especially designed for the clamping function in an energy recovery block. The compromise between forward voltage drop and recovery time offers op

文件：81.08 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：STTH1008DTI；Package：TO-220AC；800 V tandem hyperfast diode

Description The STTH1008DTI is an ultrahigh performance diode composed of two 400 V dice in series. Features • High voltage rectifier • Tandem diodes in series • Very low switching losses • Insulated device with internal ceramic • Equal thermal conditions for both 400 V diodes • Static

文件：264.87 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：STTH10LCD06FP；Package：TO-220FPAC；Turbo 2 ultrafast - high voltage rectifier for flat panel displays

Features • Ultrafast switching • Low reverse current • Low thermal resistance • Reduce conduction and switching losses • ECOPACK®2 compliant component for DPAK on demand • Insulated package: TO-220FPAC – Insulated voltage: 2000 VRMS sine

文件：255.46 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体