N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.8 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Ch: 3.3A, 30V, RDS(ON) 65 m
P-Ch: -2.3A, -30V, RDS(ON) 120 m
N & P-Channel Enhancement Mode Mos.FET

文件：3.00364 Mbytes 页数：7 Pages

SECOS

喜可士

N-Ch: 3.3A, 30V, RDS(ON) 65 m\u0001 P-Ch: -2.3A, -30V, RDS(ON) 120 m\u0001 N & P-Channel Enhancement Mode Mos.FET

Secos

喜可士

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE

文件：134.27 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed Switching Applications

文件：157.81 Kbytes 页数：5 Pages

TOSHIBA

东芝

PIN DIODE

DESCRIPTION These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6000 and UM6600 allows them to be used as series switching elements to 1 GHz. The low resistance of the UM6200 is useful

文件：221.09 Kbytes 页数：4 Pages

MICROSEMI

美高森美