N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.8 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Ch: 3.3A, 30V, RDS(ON) 65 m
P-Ch: -2.3A, -30V, RDS(ON) 120 m
N & P-Channel Enhancement Mode Mos.FET

文件：3.00364 Mbytes 页数：7 Pages

SECOS

喜可士

N-Ch: 3.3A, 30V, RDS(ON) 65 m\u0001 P-Ch: -2.3A, -30V, RDS(ON) 120 m\u0001 N & P-Channel Enhancement Mode Mos.FET

Secos

喜可士

High-Speed Switching Applications

文件：157.81 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE

文件：134.27 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝