isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.81 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.47 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：86.87 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 69mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

文件：296.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：2.1404 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 250V - 0.055廓 - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET

文件：342.05 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

双接头线缆

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邦纳电子

包装：散装 类别：电缆组件 模块化电缆 描述：CABLE MOD 8P8C PLUG TO PL 50.84'

BANNER

邦纳电子

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package

该高压N沟道MOSFET出自快恢复体二极管MDmesh DM6系列与之前一代的快恢复特性MDmesh相比，DM6兼具超低恢复电荷 (Qrr),恢复时间(trr)并且大幅提升单位面积 RDS(on) 值，具有最高效的开关表现，适用于市面上要求最苛刻的高效桥式拓扑和ZVS移相转换器。 • 快恢复二极管 \n• 单位面积的Rds(on)值比上一代更低 \n• 低栅极电荷、输入电容和电阻 \n• 经过100％雪崩测试 \n• 极高的dv/dt强度 \n• 稳压保护;

ST

意法半导体

N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package

ST

意法半导体