N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：248.49 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package

该高压N沟道MOSFET出自快恢复体二极管MDmesh DM6系列与之前一代的快恢复特性MDmesh相比，DM6兼具超低恢复电荷 (Qrr),恢复时间(trr)并且大幅提升单位面积 RDS(on) 值，具有最高效的开关表现，适用于市面上要求最苛刻的高效桥式拓扑和ZVS移相转换器。 • 快恢复二极管 \n• 单位面积的Rds(on)值比上一代更低 \n• 低栅极电荷、输入电容和电阻 \n• 经过100％雪崩测试 \n• 极高的dv/dt强度 \n• 稳压保护;

ST

意法半导体

N-channel 650 V, 74 m typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：250.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：248.49 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体