Isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：272.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

文件：1.17964 Mbytes 页数：19 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.82 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

N-CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI Power MOS Transistor ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARAC

文件：431.58 Kbytes 页数：10 Pages

STMICROELECTRONICS

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N-Channel 100-V (D-S) MOSFET

文件：969.01 Kbytes 页数：7 Pages

VBSEMI

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N沟道100 V、0.013 Ohm典型值、45 A STripFET F7功率MOSFET，TO-220封装

该N-沟道功率MOSFETs利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 处于市面上最低的RDS(on)行列 \n• 出色的品质因数（FoM） \n• 较低的Crss/Ciss比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力;

ST

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