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STP18NM60ND数据手册ST中文资料规格书
STP18NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STP18NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Rail/Tube
- 功能描述：
MOSFET N-CH 600V 13A TO-220
- 功能描述：
N-channel 600 V, 0.25 Ohm, 13 A, POWER MOSFET(with fast diode) in TO-220 packag
- 功能描述：
MOSFET N-CH 600V 0.25Ohm 13A FDMesh II
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
TO-220-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法半导体 |
2511 |
TO-220-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法 |
24+ |
NA/ |
37 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法 |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST |
24+ |
TO-220 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST |
21+ |
TO-220 |
10000 |
勤思达只做原装 现货库存 支持支持实单 |
询价 |
