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STP18N65M5数据手册ST中文资料规格书
STP18N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSSrating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STP18N65M5
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.22
- Drain Current (Dc)_max(A)
：15
- PTOT_max(W)
：110
- Qg_typ(nC)
：34
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
MICROCHIP/微芯 |
25+ |
TO-220-3(TO-220AB) |
32360 |
MICROCHIP/微芯全新特价STP18N65M5即刻询购立享优惠#长期有货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST |
21+ |
TO-220 |
1346 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST |
1726+ |
TO-220 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原装，正品 |
询价 | ||
ST |
23+ |
TO-220 |
6000 |
专业配单保证原装正品假一罚十 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
