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STP18N55M5数据手册ST中文资料规格书
STP18N55M5规格书详情
描述 Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
特性 Features
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
:STP18N55M5
- 生产厂家
:ST
- Package
:TO-220AB
- Grade
:Industrial
- VDSS(V)
:550
- RDS(on)_max(@ VGS=10V)(Ω)
:0.192
- Drain Current (Dc)_max(A)
:16
- PTOT_max(W)
:110
- Qg_typ(nC)
:31
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
Through Hole |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法半导体 |
24+ |
Through Hole |
16900 |
原装,正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST(意法半导体) |
2447 |
TO-220-3 |
115000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
STMicroelectronics |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST/意法半导体 |
25+ |
Through Hole |
10000 |
原装公司现货 |
询价 | ||
ST/意法半导体 |
22+ |
Through Hole |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法 |
20+ |
TO-220AB |
7500 |
现货很近!原厂很远!只做原装 |
询价 | ||
ST/意法 |
2024+ |
SMD |
400 |
原厂全新正品供应商 |
询价 | ||
ST |
25+23+ |
TO220 |
19756 |
绝对原装正品全新进口深圳现货 |
询价 |