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STP18NM60N数据手册ST中文资料规格书
STP18NM60N规格书详情
描述 Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
特性 Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
技术参数
- 制造商编号
:STP18NM60N
- 生产厂家
:ST
- Package
:TO-220AB
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.285
- Drain Current (Dc)_max(A)
:13
- PTOT_max(W)
:110
- Qg_typ(nC)
:35
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
2023+ |
TO-220-3 |
6895 |
原厂全新正品旗舰店优势现货 |
询价 | ||
ST专家 |
25+23+ |
TO-220 |
29215 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
11000 |
询价 | |||
ST |
24+ |
TO-220 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST |
21+ |
TO-220 |
10000 |
只做原装,质量保证 |
询价 | ||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
23+ |
TO-220-3 |
9000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
24+/25+ |
5000 |
原装正品现货库存价优 |
询价 | |||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
ST(意法半导体) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 |