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P16NE06

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

P16NE06FP

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD16NE06

N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD16NE06L

N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NE06

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NE06FP

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NE06FP

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NE06L

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NE06L/FP

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NE06LFP

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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