首页>STP105N3LL>规格书详情
STP105N3LL中文资料N沟道30 V、2.7 mOhm典型值、150 A STripFET H6功率MOSFET,TO-220封装数据手册ST规格书
STP105N3LL规格书详情
描述 Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
特性 Features
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
技术参数
- 制造商编号
:STP105N3LL
- 生产厂家
:ST
- Package
:TO-220AB
- Grade
:Industrial
- VDSS(V)
:30
- RDS(on)_max(@ 4.5/5V)(Ω)
:0.0045
- RDS(on)_max(@ VGS=10V)(Ω)
:0.0035
- Drain Current (Dc)_max(A)
:80
- PTOT_max(W)
:140
- Qg_typ(nC)
:42
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMICROELECTRONICS |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST(意法半导体) |
24+ |
TO-220 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法 |
24+ |
TO-220 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
ST |
24+ |
TO-220 |
25836 |
新到现货,只做全新原装正品 |
询价 | ||
ST/意法 |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
询价 |