N-channel 200 V, 1.1 廓, 1 A SOT-223 low gate charge STripFET??II Power MOSFET

This N-channel 200 V realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.

文件：611.91 Kbytes 页数：12 Pages

STMICROELECTRONICS

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丝印：4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V Ib=10A @Ves = 10V Rosion) £1.35Q @Ves = 10V SOT-223 package.

文件：3.04591 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 200 V (D-S) MOSFET

文件：1.03079 Mbytes 页数：8 Pages

VBSEMI

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N沟道200 V、1.1 Ohm典型值、1 A STripFET(TM) II功率MOSFET，SOT-223封装

This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. • 100% avalanche tested \n• Low gate charge \n• Exceptional dv/dt capability;

ST

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