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STN3P6F6

P-channel 60 V, 0.13 廓 typ., 3 A STripFET??VI DeepGATE??Power MOSFET in a SOT-223 package

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

3P6MH

THYRISTORS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

3P6MH

Triacssensitivegate

TGS

Tiger Electronic Co.,Ltd

3P6MH

Employsflame-retardantepoxyresinUL94V-0

KERSEMI

Kersemi Electronic Co., Ltd.

3P6MH

Triacssensitivegate

TGS

Tiger Electronic Co.,Ltd

3P6MH

THYRISTORS3AMOLDSCR

The3P4MHand3P6MHareP-gatefullydiffusedmold SCRswithanaverageon-currentof3A.Therepeatpeakoffvoltages (andreversevoltages)are400Vand600V. FEATURES •Thistransistorfeaturesasmallandlightweightpackageand iseasytohandleevenonthemountingsurfaceduetoits

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

SS3P6

HighCurrentDensitySurface-MountSchottkyRectifier

FEATURES •Verylowprofile-typicalheightof1.0mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable •Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6

HighCurrentDensitySurfaceMountSchottkyRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6

HighCurrentDensitySurfaceMountSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6

High-CurrentDensitySurfaceMountSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6L

LowVFHighCurrentDensitySurfaceMountSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6L

LowVFHighCurrentDensitySurfaceMountSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6L

SchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6L

LowVFHighCurrentDensitySurfaceMountSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

SS3P6L

LowVFHighCurrentDensitySurface-MountSchottkyBarrierRectifiers

FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveordering

VishayVishay Siliconix

威世科技威世科技半导体

V3P6

Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/NH

VishayVishay Siliconix

威世科技威世科技半导体

V3P6

SurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V3P6L

Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V3P6L

Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

FEATURES •Lowprofilepackage •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/NHM3 •Materialcategorization:fo

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    STN3P6F

  • 功能描述:

    MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST/意法
21+
NA
12500
只做全新原装公司现货特价
询价
STMicroelectronics
24+
SOT-223
30000
晶体管-分立半导体产品-原装正品
询价
STM
15+
原厂原装
44000
进口原装现货假一赔十
询价
ST/意法
20+
SOT-223
5500
代理库存,房间现货,有挂就是现货
询价
STM
21+
SOT-223
4162
专营原装正品现货,当天发货,可开发票!
询价
STM
21+
SOT-223-3
4000
原装正品 有挂有货
询价
ST/意法
2024+实力库存
SOT-223
19968
只做原厂渠道 可追溯货源
询价
STM
22+
4000
SOT-223-3
询价
ST/意法半导体
22+
SOT-223-3
6004
原装正品现货 可开增值税发票
询价
STM
23+
SOT-223-4 (TO-261-4)
20000
原装现货支持送检
询价
更多STN3P6F供应商 更新时间2024-6-25 14:30:00