N-channel 600 V, 10.4 typ., 0.44 A SuperMESHTM Power MOSFET in a SOT-223 package

Features • 100 avalanche tested • Extremely high dv/dt capability • Gate charge minimized • ESD improved capability Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established

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STMICROELECTRONICS

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N沟道600 V、10 Ohm典型值、0.44 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，SOT-223封装

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for t • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• ESD improved capability;

ST

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N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

Description This device is a N-channel SuperMESH™ that is obtained through an optimization of STMicroelectronics’ well-established strip-based PowerMESH™ layout. In addition to pushing on resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applicati

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STMICROELECTRONICS

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N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

Description This device is a N-channel SuperMESH™ that is obtained through an optimization of STMicroelectronics’ well-established strip-based PowerMESH™ layout. In addition to pushing on resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applicati

文件：657.29 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH??Power MOSFET

文件：314.67 Kbytes 页数：8 Pages

STMICROELECTRONICS

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