N沟道600 V、13 Ohm典型值、0.25 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，SO-8封装

The SuperMESHTM series is obtained through an extreme optimization of STs well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • GATE CHARGE MINIMIZED \n• TYPICAL RDS(on) = 13Ω \n• ESD IMPROVED CAPABILITY \n• EXTREMELY HIGH dv/dt CAPABILITY \n• NEW HIGH VOLTAGE BENCHMARK \n• 100% AVALANCHE TESTED;

ST

意法半导体

N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH??Power MOSFET

文件：314.67 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

文件：732.82 Kbytes 页数：14 Pages

MICROSEMI

美高森美

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：485.97 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Super Fast Recovery Diode

文件：966.07 Kbytes 页数：2 Pages

SHINDENGEN